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Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
(2016-11-02)
In this paper the influence of spacer material (S13N4, S1O2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical ...
Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
(Ieee, 2016-01-01)
In this paper the influence of spacer material (Si3N4 SiO2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical ...
Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
(Ieee, 2019-01-01)
In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors ...
Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
(2019-04-01)
In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors ...
Optimization of the Dual-Technology Back-Enhanced Field Effect Transistor
(2020-09-01)
In this paper we optimize the Dual-Technology Back-Enhanced SOI (DT BESOI) FETs varying the thickness of gate oxide, silicon film and buried oxide focusing on transfer characteristics. The DT BESOI optimization takes into ...
Avaliação do MOSFET UTBB FD-SOI com SELBOX em configuração DTMOS
(Universidade Estadual Paulista (Unesp), 2020-10-30)
O objetivo principal deste trabalho é o estudo de transistores SOI (Silicon On Insulator) UTBB (Ultra-thin Body and Buried oxide) de canal tipo-n com SELBOX (SELective Buried OXide) em configuração DTMOS (Dynamic Threshold-Voltage ...
Substrate Effect Evaluation by the Analysis of Intrinsic Capacitances in SOI UTBB Transistors
(2020-05-26)
The main goal of this paper is to present the behavior of the substrate effect in Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs with respect to the back gate bias (VSUB) through DC and AC simulations validated to ...
Substrate Effect Evaluation by the Analysis of Intrinsic Capacitances in SOI UTBB Transistors
(2020-05-26)
The main goal of this paper is to present the behavior of the substrate effect in Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs with respect to the back gate bias (VSUB) through DC and AC simulations validated to ...
Mobility extraction in ultra thin, body buried oxide and fully depleted silicon-on-insulator MOSFETExtracción de la movilidad de dispositivos MOSFET de silicio en aislante, ultra delgados y agotados completamente
(USFQ PRESS, departamento editorial de la Universidad San Francisco de Quito USFQ, 2013)
Subthreshold region analysis for UTBOX and UTBB SOI nMOSFETs with different channel lengths and silicon thickness
(2017-11-15)
This paper presents an experimental analysis of the influence of the silicon thickness (tsi)and the channel length (L) on the threshold voltage (Vt), subthreshold swing (SS), drain induced barrier lowering (DIBL), gate ...