Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET

Actas de congresos

Fecha

2016-01-01

Registro en:

2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2016.

http://hdl.handle.net/11449/159310

WOS:000392469000019

0496909595465696

0000-0002-0886-7798

Autor

Universidade de São Paulo (USP)

Universidade Estadual Paulista (Unesp)

Institución

Universidade Estadual Paulista (Brasil)

Resumen

In this paper the influence of spacer material (Si3N4 SiO2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical simulations. It is observed that the short length underlap devices are more influenced by spacer material On the other hand, self-aligned does not present much spacer material dependence for the studied dimensions.

Materias

SOI

Ultra Thin Body and Buried Oxide

Spacer

self-aligned, underlap

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