Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor

Actas de congresos

Fecha

2019-04-01

Registro en:

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019.

http://hdl.handle.net/11449/198580

10.1109/EUROSOI-ULIS45800.2019.9041908

2-s2.0-85080744450

https://repositorioslatinoamericanos.uchile.cl/handle/2250/5379214

Autor

Universidade de São Paulo (USP)

Universidade Estadual Paulista (Unesp)

Institución

Universidade Estadual Paulista (Brasil)

Resumen

In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors to those of a conventional pTFET, while eliminating the ambipolar effect.

Materias

Silicon-On-Insulator (SOI)

Tunnel Field Effect Transistor (TFET)

Ultra-Thin Body and Buried oxide (UTBB)

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