Actas de congresos
Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
Fecha
2019-01-01Registro en:
2019 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis). New York: Ieee, 3 p., 2019.
2330-5738
WOS:000565067300054
Autor
Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
Institución
Resumen
In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors to those of a conventional pTFET, while eliminating the ambipolar effect.