Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor

Actas de congresos

Fecha

2019-01-01

Registro en:

2019 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis). New York: Ieee, 3 p., 2019.

2330-5738

http://hdl.handle.net/11449/195645

WOS:000565067300054

https://repositorioslatinoamericanos.uchile.cl/handle/2250/5376283

Autor

Universidade de São Paulo (USP)

Universidade Estadual Paulista (Unesp)

Institución

Universidade Estadual Paulista (Brasil)

Resumen

In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors to those of a conventional pTFET, while eliminating the ambipolar effect.

Materias

Tunnel Field Effect Transistor (TFET)

Silicon-On-Insulator (SOI)

Ultra-Thin Body and Buried oxide (UTBB)

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