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Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs
(2018-03-07)
The operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher ION over IOFF ...
Desenvolvimento de transístores para a eletrônica impressa
(Universidade Estadual Paulista (Unesp), 2020-02-18)
Nesta tese de doutorado são apresentados resultados a respeito da fabricação e caracterização de dois tipos de transístores com eletrólito no gate (EGTs, do inglês Electrolyte Gated Transistors): Transístores eletroquímicos ...
Subthreshold region analysis for UTBOX and UTBB SOI nMOSFETs with different channel lengths and silicon thickness
(2017-11-15)
This paper presents an experimental analysis of the influence of the silicon thickness (tsi)and the channel length (L) on the threshold voltage (Vt), subthreshold swing (SS), drain induced barrier lowering (DIBL), gate ...
Substrate bias influence on the operation of junctionless nanowire transistors
(2014)
The aim of this paper is to analyze the substrate bias influence on the operation of junctionless nanowire transistors based on 3-D simulated and experimental results, accomplished by modeled data. The threshold voltage, ...
Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs
(Ieee, 2017-01-01)
The operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher I-ON over I-OFF ...
Sensores baseados em nanofios semicondutores de SnO2: fotodetector de luz UV e sensor de gás
(Universidade Federal de São CarlosUFSCarPrograma de Pós-Graduação em Física - PPGFCâmpus São Carlos, 2022-04-11)
In this work, sensors employing SnO2 semiconductor nanowires as active layer for gas
and light detection were built. SnO2 nanowire samples were grown by VLS (VapourLiquid-Solid) method and morphological and structural ...
Electrical characterization of vertically stacked p-FET SOI nanowires
(2018)
© 2017 Elsevier LtdThis work presents the performance and transport characteristics of vertically stacked p-type MOSFET SOI nanowires (NWs) with inner spacers and epitaxial growth of SiGe raised source/drain. The conventional ...
A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact
(2021-01-01)
Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) ...
Electrical characterization of vertically stacked p-FET SOI nanowires
(2018)
© 2017 Elsevier LtdThis work presents the performance and transport characteristics of vertically stacked p-type MOSFET SOI nanowires (NWs) with inner spacers and epitaxial growth of SiGe raised source/drain. The conventional ...