Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs

Actas de congresos

Fecha

2017-01-01

Registro en:

2017 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2017.

2573-5926

http://hdl.handle.net/11449/186356

WOS:000463041500075

https://repositorioslatinoamericanos.uchile.cl/handle/2250/5367391

Autor

UTFPR

Universidade de São Paulo (USP)

IMEC

Universidade Estadual Paulista (Unesp)

Katholieke Univ Leuven

Institución

Universidade Estadual Paulista (Brasil)

Resumen

The operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher I-ON over I-OFF ratio for the strained device, achieving around three orders of magnitude higher value than the relaxed channel at 77 K thanks to the strong hole mobility enhancement and thermal deactivation of the off-state current at low temperature.

Materias

FinFET

relaxed

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