Actas de congresos
Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs
Fecha
2018-03-07Registro en:
2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, v. 2018-March, p. 1-3.
10.1109/S3S.2017.8309245
2-s2.0-85047777282
0496909595465696
0000-0002-0886-7798
Autor
UTFPR
Universidade de São Paulo (USP)
Imec
Universidade Estadual Paulista (Unesp)
KU Leuven
Institución
Resumen
The operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher ION over IOFF ratio for the strained device, achieving around three orders of magnitude higher value than the relaxed channel at 77 K thanks to the strong hole mobility enhancement and thermal deactivation of the off-state current at low temperature.