Artigo
Substrate bias influence on the operation of junctionless nanowire transistors
Fecha
2014Registro en:
TREVISOLI, Renan Doria; DORIA, Rodrigo Trevisoli; DE SOUZA, Michelly; PAVANELLO, Marcelo A.. Substrate Bias Influence on the Operation of Junctionless Nanowire Transistors. IEEE Transactions on Electron Devices, v. 61, n. 5, p. 1575-1582, 2014.
0018-9383
Autor
Trevisoli R.
Doria R.T.
De Souza M.
Pavanello M.A.
Resumen
The aim of this paper is to analyze the substrate bias influence on the operation of junctionless nanowire transistors based on 3-D simulated and experimental results, accomplished by modeled data. The threshold voltage, the maximum transconductance, the subthreshold slope, the drain-induced barrier lowering (DIBL), and the ION/IOFF ratio are the key parameters under analysis. It has been shown that the negative back bias can reduce the short-channel effects occurrence, improving the ION/ OFF ratio and DIBL. © 1963-2012 IEEE.