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Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells
(American Institute of Physics, 2013-03)
Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) ...
Characterization of thin polycrystalline silicon films deposited on glass by CVD
(IOP Publishing, 2012-12)
We deposited polycrystalline silicon (poly-Si) thin films on commercial float glass by chemical vapour deposition from trichlorosilane at temperatures between 735 and 870°C. The structural properties of the films were ...
Polycrystalline silicon thin films on glass deposited from chlorosilanes at intermediate temperatures
(Edp Sciences, 2012-05)
We show that commercial float glass can be used as a substrate to deposit polycrystalline silicon (poly-Si) by chemical vapor deposition from trichlorosilane at temperatures between 740 and 870 ºC. By using scanning electron ...
Study of polymorphous silicon and germanium as thermo-sensing films for infrared detectors
(Journal of Non-Crystalline Solids, 2012)