In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors ...

In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors ...

Efficient selection of semiconducting SWCNTs of large diameter range (0.8-1.6 nm) on demand is demonstrated. Different diameters of SWCNT are systematically selected by tuning the alkyl side-chain lengths of the wrapping ...

In this article, the effect of phenyl-C61-butyric acid methyl ester (PCBM) layer on the electrical performance of field-effect transistors (FETs) based on antimony-doped tin dioxide (Sb:SnO2) is reported. PCBM is a soluble ...

An evaluation of a dielectrically modulated (DM) and a fringing field (FF) biosensor based on a tunneling field-effect transistor (Bio-TFET) by 2D numerical simulation is presented. The bio detection is based on the presence ...

Graphene, a two-dimensional (2D) material composed only by carbon atoms, has been widely studied due to its electrical, mechanical and optical properties. Recently, the combination of graphene with others 2D materials (van ...

In this work, sensors employing SnO2 semiconductor nanowires as active layer for gas and light detection were built. SnO2 nanowire samples were grown by VLS (VapourLiquid-Solid) method and morphological and structural ...