article
Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells
Registro en:
I.E. Orozco Hinostroza, M. Avalos-Borja, V.D. Compeán García, C. Cuellar Zamora, A.G. Rodríguez, E. López Luna, M.A. Vidal, Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells, Journal of Crystal Growth, Volume 435, 2016, Pages 110-113.
Autor
Orozco Hinostroza, Ignacio Everardo
Avalos Borja, Miguel
Compeán García, Vicente Damian
Cuellar Zamora, C.
Rodriguez, Ángel
López Luna, Edgar
Vidal Borbolla, Miguel Ángel
Resumen
"Light emission in the three primary colors was achieved in cubic GaN/InGaN/GaN heterostructures grown by molecular beam epitaxy on MgO substrates in a single growth process. A heterostructure with four quantum wells with a width of 10 nm was grown; this quantum wells width decrease the segregation effect of In. Photoluminescence emission produced four different emission signals: violet, blue, green-yellow and red. Thus, we were able to tune energy transitions in the visible spectrum modifying the In concentration in cubic InxGa1?xN ternary alloy."