Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells

dc.creatorOrozco Hinostroza, Ignacio Everardo
dc.creatorAvalos Borja, Miguel
dc.creatorCompeán García, Vicente Damian
dc.creatorCuellar Zamora, C.
dc.creatorRodriguez, Ángel
dc.creatorLópez Luna, Edgar
dc.creatorVidal Borbolla, Miguel Ángel
dc.date2019-08-09T22:22:44Z
dc.date2019-08-09T22:22:44Z
dc.date2016
dc.date.accessioned2023-07-17T22:04:21Z
dc.date.available2023-07-17T22:04:21Z
dc.identifierI.E. Orozco Hinostroza, M. Avalos-Borja, V.D. Compeán García, C. Cuellar Zamora, A.G. Rodríguez, E. López Luna, M.A. Vidal, Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells, Journal of Crystal Growth, Volume 435, 2016, Pages 110-113.
dc.identifierhttp://hdl.handle.net/11627/5036
dc.identifierhttps://doi.org/10.1016/j.jcrysgro.2015.11.022
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/7543922
dc.description"Light emission in the three primary colors was achieved in cubic GaN/InGaN/GaN heterostructures grown by molecular beam epitaxy on MgO substrates in a single growth process. A heterostructure with four quantum wells with a width of 10 nm was grown; this quantum wells width decrease the segregation effect of In. Photoluminescence emission produced four different emission signals: violet, blue, green-yellow and red. Thus, we were able to tune energy transitions in the visible spectrum modifying the In concentration in cubic InxGa1?xN ternary alloy."
dc.formatapplication/pdf
dc.publisherElsevier
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rightsAcceso Abierto
dc.subjectA3. Quantum wells
dc.subjectA3. Molecular beam epitaxy
dc.subjectB2. Semiconducting III–V materials
dc.subjectB3. Heterojunction semiconductor devices
dc.subjectFÍSICA
dc.titleTuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells
dc.typearticle


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