A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs

Actas de congresos

Fecha

2019-08-01

Registro en:

SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.

http://hdl.handle.net/11449/198333

10.1109/SBMicro.2019.8919276

2-s2.0-85077200437

https://repositorioslatinoamericanos.uchile.cl/handle/2250/5378967

Autor

Universidade de São Paulo (USP)

UFRGS

Universidade Estadual Paulista (Unesp)

Institución

Universidade Estadual Paulista (Brasil)

Resumen

The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high (Δ VT≈200-300mV-for W = 10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths.

Materias

MOSFET

NBTI

SOI

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