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A Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs
(Ieee, 2019-01-01)
The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical ...
A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs
(2019-08-01)
The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical ...
NBTI em transistores sem junções fabricados na tecnologia SOI
(Centro Universitário FEI, São Bernardo do Campo, 2022)
Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions
(2020-01-01)
This work presents an experimental analysis of the Negative-Bias-Temperature-Instability (NBTI) on omegagate nanowire (NW) pMOSFETS transistors and the trends analysis from simulations, focusing on the influence of channel ...
The Correlation between the NBTI Effect and the Surface Potential and Density of Interface Traps in Junctionless Nanowire Transistors
(2020-07-31)
This paper discusses the nature of degradation by NBTI effect in MOS junctionless devices when varying the density of interface traps and surface potential. The data obtained in simulations are compared with results from ...
NBTI em transistores sem junções fabricados na tecnologia SOI
(Centro Universitário FEI, São Bernardo do Campo, 2022)
Aqui apresenta-se o estudo do efeito Negative Bias Temperature Instability (NBTI) em dispositivos Junctionless Nanowire Transistors (JNTs). Primordialmente, dispositivos JNTs se diferem de dispositivos implementados em ...
Estudo do efeito NBTI em transistores MOS sem junções
(Centro Universitário FEI, São Bernardo do Campo, 2019)