Brasil | Actas de congresos

A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs

dc.contributorUniversidade de São Paulo (USP)
dc.contributorUFRGS
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2020-12-12T01:09:54Z
dc.date.accessioned2022-12-19T20:39:48Z
dc.date.available2020-12-12T01:09:54Z
dc.date.available2022-12-19T20:39:48Z
dc.date.created2020-12-12T01:09:54Z
dc.date.issued2019-08-01
dc.identifierSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.
dc.identifierhttp://hdl.handle.net/11449/198333
dc.identifier10.1109/SBMicro.2019.8919276
dc.identifier2-s2.0-85077200437
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/5378967
dc.description.abstractThe Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high (Δ VT≈200-300mV-for W = 10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths.
dc.languageeng
dc.relationSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
dc.sourceScopus
dc.subjectMOSFET
dc.subjectNBTI
dc.subjectNW
dc.subjectSOI
dc.titleA negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs
dc.typeActas de congresos


Este ítem pertenece a la siguiente institución