A Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs

Actas de congresos

Fecha

2019-01-01

Registro en:

2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019.

http://hdl.handle.net/11449/195386

WOS:000534490900007

https://repositorioslatinoamericanos.uchile.cl/handle/2250/5376023

Autor

Universidade de São Paulo (USP)

Rio Grande do Sul Fed Univ

Universidade Estadual Paulista (Unesp)

Institución

Universidade Estadual Paulista (Brasil)

Resumen

The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high (Delta V-T approximate to 200-300mV - for W-NW=10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths.

Materias

NBTI

SOI

MOSFET

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