A Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs

dc.contributorUniversidade de São Paulo (USP)
dc.contributorRio Grande do Sul Fed Univ
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2020-12-10T17:32:46Z
dc.date.accessioned2022-12-19T20:03:51Z
dc.date.available2020-12-10T17:32:46Z
dc.date.available2022-12-19T20:03:51Z
dc.date.created2020-12-10T17:32:46Z
dc.date.issued2019-01-01
dc.identifier2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019.
dc.identifierhttp://hdl.handle.net/11449/195386
dc.identifierWOS:000534490900007
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/5376023
dc.description.abstractThe Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high (Delta V-T approximate to 200-300mV - for W-NW=10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths.
dc.languageeng
dc.publisherIeee
dc.relation2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019)
dc.sourceWeb of Science
dc.subjectNBTI
dc.subjectNW
dc.subjectSOI
dc.subjectMOSFET
dc.titleA Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs
dc.typeActas de congresos


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