Growth and properties of Pb(Zr0.53Ti0.47)O 3 thin films

Abstract

PZT films were successfully grown on SrTiO3 and Sr(Nb)TiO 3 single crystal substrates by a high-oxygen pressure (about 1 Torr) rf sputtering technique. The structural properties of the films were evaluated by θ/2θ, ω and φ XRD-scans, and by RBS spectroscopy. XRD data showed epitaxial growth of the films, with the orientation relationships PZT [001] parallel to [001] of the substrate, and PZT [100] parallel to [100] of the substrate. RBS analyses showed a sharp film-substrate interface, with minimal lead diffusion. The ferroelectric hysteresis loops measured in the Pt/PZT/SNTO heterostructures show good ferroelectric behavior. The I-V characteristics measured in the Pt/PZT/LSCO/Si heterostructure showed that the conducting behavior is in agreement with the spatial charge limited current (SCLC) theory. © 2005 Elsevier Ltd. All rights reserved.