| dc.contributor | Blanco, O., Centro de Investigación de Materiales, DIP-CUCEI, U. de G., A.P. 2-638, 44281 Guadalajara Jal., Mexico; Martínez, E., Centro de Ciencias de la Materia Condensada, UNAM, A.P. 2861, 22800 Ensenada BC, Mexico; Heiras, J., Centro de Ciencias de la Materia Condensada, UNAM, A.P. 2861, 22800 Ensenada BC, Mexico; Siqueiros, J., Centro de Ciencias de la Materia Condensada, UNAM, A.P. 2861, 22800 Ensenada BC, Mexico; Castellanos-Guzmán, A.G., Centro de Investigación de Materiales, DIP-CUCEI, U. de G., A.P. 2-638, 44281 Guadalajara Jal., Mexico | |
| dc.description.abstract | PZT films were successfully grown on SrTiO3 and Sr(Nb)TiO 3 single crystal substrates by a high-oxygen pressure (about 1 Torr) rf sputtering technique. The structural properties of the films were evaluated by θ/2θ, ω and φ XRD-scans, and by RBS spectroscopy. XRD data showed epitaxial growth of the films, with the orientation relationships PZT [001] parallel to [001] of the substrate, and PZT [100] parallel to [100] of the substrate. RBS analyses showed a sharp film-substrate interface, with minimal lead diffusion. The ferroelectric hysteresis loops measured in the Pt/PZT/SNTO heterostructures show good ferroelectric behavior. The I-V characteristics measured in the Pt/PZT/LSCO/Si heterostructure showed that the conducting behavior is in agreement with the spatial charge limited current (SCLC) theory. © 2005 Elsevier Ltd. All rights reserved. | |
