Conference Paper
Analysis and simulation of a 45nm high-K/metal PD-SOI DTMOS under forward bias
Fecha
2011Autor
Abimael, J.-P.
Ambrosio, R.C.L.
Carlos, A.P.M.
Karim, M.-L.
Jose, A.M.-G.
Zurika, I.B.-G.
Institución
Resumen
As effective gate length and gate oxide thickness in Metal-Oxide- Semiconductor (MOS) transistors are aggressively scaled down for higher performance and circuit density, the levels for gate leakage current [1-2], standby power consumption [1-2] and gate oxide reliability [3] are degraded. Therefore, now hafnium dioxide (HfO 2) is being incorporated into the gate stack of silicon based MOSFETs. © 2011 IEEE.