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Evolution of climatological normals of IAG-USP Meteorological Station for the 1941-2010 period
(Sociedade Brasileira de MeteorologiaFlorianópolis, 2013)
In this study, we used the meteorologieal observations made at IAG-USP
Meteorologieal Station, loeated in Parque Estadual das Fontes do Ipiranga (eity of São Paulo).
The following meteorologieal variables were used: air ...
Influence of proton radiation and strain on nFinFET zero temperature coefficient
(2016-11-02)
This paper presents for the first time the study of proton radiation and strain influence on the Zero Temperature Coefficient (ZTC) in SOI nFinFETs based on experimental data and simple analytical model. The strain improves ...
Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes
(2017-01-03)
One of future device candidates for the Si platform integration, the Ge pFinFET, is evaluated for two different shallow-trench-isolation (STI) processes at low temperature operation. The effective mobility around 700 cm2/Vs ...
Temperature and humidity measurement using an off-the-shelf MEMS sensor: Beyond arduino's playground
(2021-08-23)
In this work an off-the-shelf, modern, integrated temperature, pressure and humidity sensor was interfaced to a PIC18F4550, a popular 8-bit microcontroller. A bit-banging SPI protocol was implemented. The SPI clock was set ...
Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes
(Ieee, 2016-01-01)
One of future device candidates for the Si platform integration, the Ge pFinFET, is evaluated for two different shallow-trench-isolation (STI) processes at low temperature operation. The effective mobility around 700 ...
Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs
(Ieee, 2016-01-01)
This work reports for the first time on the experimental study of the intrinsic voltage gain of InGaAs nTFET. The influence of Indium/Gallium composition and Zn diffusion temperature is analyzed. For a higher Indium amount ...
Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs
(2017-01-03)
This work reports for the first time on the experimental study of the intrinsic voltage gain of InGaAs nTFET. The influence of Indium/Gallium composition and Zn diffusion temperature is analyzed. For a higher Indium amount ...
Balance of pH of chicks from eggs injected with ascorbic acid and subjected to thermal stress
(2012-12-01)
This study aimed to verify that chicks from eggs injected with ascorbic acid and subjected to heat stress would have changes in acid-base balance, compared to chicks incubated at thermoneutral without injection of ascorbic ...
Temperature and stoichiometry effect on microstructural and ferroelectric properties of Pb(Zr1-xTix)O3 thin films prepared by chemical soulution deposition
(2004-05-10)
Lead zirconate titanate (PZT) solutions were prepared using a polymeric precursor method, Zr n-propoxide and Ti i-propoxide were used as starting materials with ethylene glycol and water as solvents. The PZT solution was ...
Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs
(Ieee, 2017-01-01)
The operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher I-ON over I-OFF ...