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Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes
(2017-01-03)
One of future device candidates for the Si platform integration, the Ge pFinFET, is evaluated for two different shallow-trench-isolation (STI) processes at low temperature operation. The effective mobility around 700 cm2/Vs ...
Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes
(Ieee, 2016-01-01)
One of future device candidates for the Si platform integration, the Ge pFinFET, is evaluated for two different shallow-trench-isolation (STI) processes at low temperature operation. The effective mobility around 700 ...
Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs
(2018-03-07)
The operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher ION over IOFF ...
Strain-Temperature Discrimination Using Multimode Interference in Tapered Fiber
(Ieee-inst Electrical Electronics Engineers IncPiscatawayEUA, 2013)
Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs
(PERGAMON-ELSEVIER SCIENCE LTD, 2008)
This work shows a comparison between the analog performance of standard and strained Si n-type triple-gate FinFETs with high-K dielectrics and TiN gate material. Different channel lengths and fin widths are studied. It is ...
Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs
(Ieee, 2017-01-01)
The operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher I-ON over I-OFF ...
Strain gage óptico, funcionamento e aplicações
(Universidade Tecnológica Federal do ParanáCuritibaBrasilCurso de Especialização em Automação IndustrialUTFPR, 2016-10-05)
A long time man has used light signals as a means of communication is through light reflected in mirrors or a lighthouse to guide ships. However, these methods were limited and depended on a direct target and could be ...
Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs
(2008)
This work shows a comparison between the analog performance of standard and strained Si n-type triple-gate FinFETs with high-κ dielectrics and TiN gate material. Different channel lengths and fin widths are studied. It is ...
Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
(2015)
© 2014 Elsevier Ltd. All rights reserved.Three techniques to implement mechanical stress in n-channel Multiple Gate MOSFETs (MuGFETs) are investigated through 3D simulations and transconductance measurements. They are: ...