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Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs
(2018-03-07)
The operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher ION over IOFF ...
Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs
(Ieee, 2017-01-01)
The operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher I-ON over I-OFF ...
Experimental comparison between relaxed and strained Ge pFinFETs
(2017-06-29)
The experimental comparison between relaxed and strained Ge pFinFETs operating at room temperature is discussed. Although, the strain into the channel improves the drain current for wide transistors due to the boost of ...
Experimental comparison between relaxed and strained Ge pFinFETs
(Ieee, 2017-01-01)
The experimental comparison between relaxed and strained Ge pFinFETs operating at room temperature is discussed. Although, the strain into the channel improves the drain current for wide transistors due to the boost of ...
Ground plane impact on the threshold voltage of relaxed ge pfinfets
(2018-10-26)
In this paper the Ground Plane (GP) influence on the threshold voltage of Ge pFinFET devices is investigated. In order to explain the experimental threshold voltage variation with fin width, TCAD simulations have been ...
Sequential IRMPD of XGe(OEt)(4)(-) ions: Gas-phase synthesis of novel oxy-germanium anions
(ELSEVIER SCIENCE BV, 2011)
The gas-phase ion/molecule reactions of F(-) and EtO(-) with Ge(OEt)(4) yield readily and exclusively pentacoordinated complexes XGe(OEt)(4)(-) (X = F, EtO) at pressures in the 10(-8) T range as observed by FT-ICR techniques. ...
Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs
(Ieee, 2018-01-01)
In this paper the Ground Plane (GP) influence on the threshold voltage of Ge pFinFET devices is investigated. In order to explain the experimental threshold voltage variation with fin width, TCAD simulations have been ...