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An accurate low-voltage analog memory-cell with built-in multiplication
(2001-01-01)
A CMOS memory-cell for dynamic storage of analog data and suitable for LVLP applications is proposed. Information is memorized as the gate-voltage of input-transistor of a gain-boosting triode-transconductor. The enhanced ...
Methodology analysis of a computational tool used in electronic circuit design
(2011-08-25)
This paper considers the importance of using a top-down methodology and suitable CAD tools in the development of electronic circuits. The paper presents an evaluation of the methodology used in a computational tool created ...
An analog implementation of radial basis neural networks (RBNN) using BiCMOS technology
(2001-12-01)
This paper describes a analog implementation of radial basis neural networks (RBNN) in BiCMOS technology. The RBNN uses a gaussian function obtained through the characteristic of the bipolar differential pair. The gaussian ...
Generating VHDL-AMS models of digital-to-analogue converters from MATLAB®/SIMULINK®
(2007-11-27)
Today, the trend within the electronics industry is for the use of rapid and advanced simulation methodologies in association with synthesis toolsets. This paper presents an approach developed to support mixed-signal circuit ...
Radial basis function network applied to the linearization of a voltage controlled oscillator
(2007-12-01)
An analog circuit that implements a radial basis function network is presented. The proposed circuit allows the adjustment of all shape parameters of the radial functions, i.e., amplitude, center and width. The implemented ...
Performance evaluation of Tunnel-FET basic amplifier circuits
(Ieee, 2019-01-01)
This work analyzes the performance of measured Tunneling Field-Effect Transistors (TFET) when applied to analog circuits. The method uses a look-up table based behavioral model, taking the experimental results from a ...
Performance evaluation of Tunnel-FET basic amplifier circuits
(2019-03-14)
This work analyzes the performance of measured Tunneling Field-Effect Transistors (TFET) when applied to analog circuits. The method uses a look-up table based behavioral model, taking the experimental results from a ...
Output conductance at saturation like region on Line-TFET for different dimensions
(2019-08-01)
This work presents the behavior of Line Tunneling Field Effect Transistors (Line-TFET) at the saturation like region with different device's dimensions. In spite of the drain current and transconductance (gm) of the Line-TFET ...
Output conductance at saturation like region on Line-TFET for different dimensions
(Ieee, 2019-01-01)
This work presents the behavior of Line Tunneling Field Effect Transistors (Line-TFET) at the saturation like region with different device's dimensions. In spite of the drain current and transconductance (gm) of the Line-TFET ...
Operational Transconductance Amplifier Designed with SiGe-source Nanowire Tunnel-FET using Experimental Lookup Table Model
(2020-09-01)
An Operational Transconductance Amplifier (OTA) circuit designed with SiGe-source nanowire Tunnel-FETs is presented for the first time. The results are compared with Si nanowire TFET and with Si nanowire MOSFET designs. ...