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Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
(2016-11-02)
In this paper the influence of spacer material (S13N4, S1O2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical ...
Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
(Ieee, 2016-01-01)
In this paper the influence of spacer material (Si3N4 SiO2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical ...
Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
(Ieee, 2019-01-01)
In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors ...
Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
(2019-04-01)
In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors ...
On the improvement of the electroluminescent signal of organic light emitting diodes by the presence of an ultra-thin metal layer at the interface organic/ITO
(WILEY-V C H VERLAG GMBH, 2008-01)
The electroluminescent (EL) signal of organic light emitting diodes (OLEDs) based on simple "hole transporting layer/electron transporting layer" (HTL/ETL) structures has been studied as a function of the anode/HTL interface, ...
Oxygen influence in the magnetic and the transport properties of ferroelectric/ferromagnetic heterostructures
(Elsevier Science Sa, 2017-10)
Oxygen vacancies in oxides nanostructures are the origin of many intriguing phenomena. We have studied the influence of the oxygen pressure in the tunneling properties of a ferroelectric barrier, Ba0.25Sr0.75TiO3 (BSTO), ...
Titanium monoxide ultra-thin coatings evaporated onto polycrystalline copper films
(Elsevier, 2004)
We evaporated polycrystalline copper thin films of thickness between 10 and 100nm on silicon substrates with their
native oxide under ultra-high-vacuum conditions. Some of them were exposed to air for a period ranging ...
XPS study of the corrosion protection of fluorozirconate glasses dip-coated with SnO2 transparent thin films
(Springer, 2004-10-01)
Tin oxide nanoparticles prepared by an aqueous sol-gel method were deposited by dip-coating on fluorozirconate glass, ZBLAN (53%ZrF4-20%BaF2-4%LaF3-3%AlF3-20%NaF) to improve its resistance against wet corrosion. The aqueous ...
Optimization of the Dual-Technology Back-Enhanced Field Effect Transistor
(2020-09-01)
In this paper we optimize the Dual-Technology Back-Enhanced SOI (DT BESOI) FETs varying the thickness of gate oxide, silicon film and buried oxide focusing on transfer characteristics. The DT BESOI optimization takes into ...
XPS study of the corrosion protection of fluorozirconate glasses dip-coated with SnO2 transparent thin films
(Springer, 2004-10-01)
Tin oxide nanoparticles prepared by an aqueous sol-gel method were deposited by dip-coating on fluorozirconate glass, ZBLAN (53%ZrF4-20%BaF2-4%LaF3-3%AlF3-20%NaF) to improve its resistance against wet corrosion. The aqueous ...