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An interference method for the determination of thin film anisotropy
(Elsevier Science Sa LausanneLausanne 1Suíça, 1996)
Laser interference structuring of a-Ge films on GaAs
(Amer Inst PhysicsMelvilleEUA, 2002)
Absorptance homogeneity and its relaxation in thin films by photothermal microscopy
(Optical Society of America, 2019)
A photothermal microscope for absorptance homogeneity analysis is described. Absorptance maps with micrometer resolution and high sensitivity are obtained. Changes in absorptance are due to laser annealing of defects via ...
Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films
(2008-05-21)
Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the ...
Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films
(2008-05-21)
Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the ...
Potential of Photocurrent Improvement in μc-Si:H Solar Cells with TCO Substrates Structured by Direct Laser Interference Patterning
(Wiley VCH Verlag, 2016-09)
Thin film solar cells based on weak absorbers like hydrogenated microcrystalline silicon (µc–Si:H) need an effective light management to maximize light absorption. In this work, the authors study numerically the light ...
Optical-electrical properties and thickness analysis of TiO2 thin films obtained by magnetron sputtering
(Springer Science and Business Media LLC, 2022)
Optical diffraction gratings produced by laser interference structuring of amorphous germanium-nitrogen alloys
(Amer Inst PhysicsMelvilleEUA, 2002)
Color Engineering of Silicon Nitride Surfaces to Characterize the Polydopamine Refractive Index
(Wiley VCH Verlag, 2018-12)
A simple methodology to generate polydopamine (PDA) surfaces featured with color due to thin-film interference phenomena is presented. It is based on depositing ultra-thin films of polydopamine on a Si/Si 3 N 4 wafer that ...
Filmes finos depositados pela técnica de implantação iônica por imersão em plasma e deposição (IIIPD), utilizando o monômero HMDSN e os gases argônio, hélio e nitrogênio
(Universidade Estadual Paulista (UNESP), 2016)