Artículos de revistas
Laser interference structuring of a-Ge films on GaAs
Registro en:
Journal Of Applied Physics. Amer Inst Physics, v. 91, n. 5, n. 2916, n. 2920, 2002.
0021-8979
WOS:000174182400049
10.1063/1.1448674
Autor
Santos, PV
Zanatta, AR
Jahn, U
Trampert, A
Dondeo, F
Chambouleyron, I
Institución
Resumen
We have investigated the laser interference crystallization (LIC) of amorphous germanium films on (100)-oriented GaAs substrates using nanosecond laser pulses. We demonstrate that LIC can produce periodic arrays of epitaxially crystallized Ge lines on GaAs with submicrometer widths. The gratings display a surface undulation with faceted surfaces, which depends on laser fluency. The undulation is attributed to the lateral solidification process induced by the temperature gradients created during the LIC process. (C) 2002 American Institute of Physics. 91 5 2916 2920