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Cyclic electric field stress on bipolar resistive switching devices
(American Institute of Physics, 2013-12)
We have studied the effects of accumulating cyclic electrical pulses of increasing amplitude on the non-volatile resistance state of interfaces made by sputtering a metal (Au, Pt) on top of the surface of a cuprate ...
Abnormal resistive switching in electrodeposited Prussian White thin films
(2022-03-10)
Prussian White (PW) layers were deposited on Au/Cr/Si substrates by electrodeposition and characterized by different techniques. Scanning electron microscopy (SEM) images and Raman mapping reveal a uniform and homogeneous ...
Resistive Switching Behavior seen from the Energy Point of View
(IEEE, 2018)
The technology of Resistive Switching (RS) devices (memristors) is continuously maturing on its way towards viable commercial establishment. So far, the change of resistance has been identified as a function of the applied ...
Bipolar resistive switching on TiO2/Au by conducting Atomic Force Microscopy
(Elsevier, 2019)
In this work we present a Conducting Atomic Force Microscopy (CAFM) study of TiO2 thin films that display bipolar resistive switching behavior. Samples were synthesized by reactive sputtering after a lithography process ...
Resistive switching effect on Al2O3/InGaAs stacks
(Elsevier Science, 2013-09)
The resistive switching (RS) pheno menon is currently attracting a lot of attention due to its potential Applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of ...
Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
(Institute of Electrical and Electronics Engineers, 2014-01-13)
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual ...
Resistive switching in ferromagnetic La2/3Ca1/3MnO3 thin films
(Institute of Electrical and Electronics Engineers, 2013-07-23)
Ferromagnetic thin films of La_{2/3}Ca_{1/3}MnO_{3} manganite were grown by pulsed laser deposition, under different oxygen atmospheres, on silicon substrates.We performed structural, magnetic, spectroscopic, and electrical ...
Standards for the Characterization of Endurance in Resistive Switching Devices
(American Chemical Society, 2021-11)
Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, ...
Unipolar resistive switching behavior in Al2O3/HfO2 multilayer dielectric stacks: fabrication, characterization and simulation
(IOP Publishing, 2020)
In this work, the impact of different HfO2/Al2O3-based multilayer dielectric stack (DS) configurations on the electrical characteristics and on the resistive switching (RS) performance of Ni/Insulator/Silicon devices has ...
Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
(Institute of Electrical and Electronics Engineers, 2019-08)
In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying ...