Resistive switching in ferromagnetic La2/3Ca1/3MnO3 thin films

Alposta, Ignacio; Kalstein, Ariel; Ghenzi, Néstor; Bengió, Silvina; Zampieri, Guillermo Enrique; Rubi, Diego; Levy, Pablo Eduardo

Artículos de revistas

Fecha

2013-07-23

Registro en:

Alposta, Ignacio; Kalstein, Ariel; Ghenzi, Néstor; Bengió, Silvina; Zampieri, Guillermo Enrique; et al.; Resistive switching in ferromagnetic La2/3Ca1/3MnO3 thin films; Institute of Electrical and Electronics Engineers; IEEE Transactions on Magnetics; 49; 8; 23-7-2013; 4582-4585

0018-9464

http://hdl.handle.net/11336/21942

CONICET Digital

CONICET

http://repositorioslatinoamericanos.uchile.cl/handle/2250/1898906

Autor

Alposta, Ignacio

Kalstein, Ariel

Ghenzi, Néstor

Bengió, Silvina

Zampieri, Guillermo Enrique

Rubi, Diego

Levy, Pablo Eduardo

Institución

Consejo Nacional de Investigaciones Científicas y Tecnológicas (Argentina)

Resumen

Ferromagnetic thin films of La_{2/3}Ca_{1/3}MnO_{3} manganite were grown by pulsed laser deposition, under different oxygen atmospheres, on silicon substrates.We performed structural, magnetic, spectroscopic, and electrical characterization of the films. Resistive switching between high and low resistance states was obtained upon pulsing with opposite polarities voltages. The I-V curves exhibit sharp transitions between these states. The RS properties are strongly dependant on the films oxygen stochiometry and on the compliance current used for producing the high to low transition. ON/OFF ratios as high as 1000 were obtained for optimal RS conditions. Obtained results are discussed within the framework of mobile oxygen vacancies.

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