Resistive switching effect on Al2O3/InGaAs stacks

Palumbo, Félix Roberto Mario; Shekhter, P.; Krylov, I.; Ritter, D.; Eizenberg, M.

Artículos de revistas

Fecha

2013-09

Registro en:

Palumbo, Félix Roberto Mario; Shekhter, P.; Krylov, I.; Ritter, D.; Eizenberg, M.; Resistive switching effect on Al2O3/InGaAs stacks; Elsevier Science; Microelectronic Engineering; 109; 9-2013; 83-86

0167-9317

http://hdl.handle.net/11336/20949

CONICET Digital

CONICET

http://repositorioslatinoamericanos.uchile.cl/handle/2250/1885385

Autor

Palumbo, Félix Roberto Mario

Shekhter, P.

Krylov, I.

Ritter, D.

Eizenberg, M.

Institución

Consejo Nacional de Investigaciones Científicas y Tecnológicas (Argentina)

Resumen

The resistive switching (RS) pheno menon is currently attracting a lot of attention due to its potential Applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of MG/Al2O3/InGaAs is very relevant since this stack is a strong candidate for the new generation of CMOS devices with high mobility channels

Materias

RESISTIVE SWITCHING

HIGH-K DIELECTRICS

OXIDE BREAKDOWN

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