Artículos de revistas
Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
Fecha
2014-01-13Registro en:
Stoliar, Pablo Alberto; Levy, Pablo Eduardo; Sánchez, María José; Leiva, A. G.; Albornoz, C.A.; et al.; Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit; Institute of Electrical and Electronics Engineers; Ieee Transactions On Circuits And Systems Ii-analog And Digital Signal Processing; 61; 1; 13-1-2014; 21-25
1057-7130
CONICET Digital
CONICET
Autor
Stoliar, Pablo Alberto
Levy, Pablo Eduardo
Sánchez, María José
Leiva, A. G.
Albornoz, C.A.
Gomez Marlasca, F.
Zanini, A.
Toro Salazar, Cinthya Emma
Ghenzi, N.
Rozenberg, M. J.
Resumen
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs. Index Terms?Multilevel cell, Resistive switching, Non-volatile memory, ReRAM .