Buscar
Mostrando ítems 1-10 de 21
Studying ReRAM devices at Low Earth Orbits using the LabOSat platform
(Pergamon-Elsevier Science Ltd, 2019-01)
LabOSat (acronym for “Laboratory On a Satellite”) is a type of electronic platform designed to perform experiments in harsh, remote environments. Up to now, LabOSat platforms have been used mainly for characterizing and ...
YBCO-based non-volatile ReRAM tested in Low Earth Orbit
(Springer, 2020-08)
An YBCO-based test structure corresponding to the family of ReRAM devices associated with the valence change mechanism is presented. We have characterized its electrical response previous to its lift-off to a Low Earth ...
Random telegraph signal noise in advanced high performance and memory devices
(2016-11-02)
Random Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS ...
Random Telegraph Signal Noise in Advanced High Performance and Memory Devices
(Ieee, 2016-01-01)
Random Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS ...
Printable ReRAM devices based on the non-stoichiometric junction CuS/Cu2-xS
(2016-10-27)
Hereby a novel thin film-based configuration of redox resistive switching memory (ReRAM) based on cheap and abundant copper sulphide (CuS) is reported. The devices working mechanism is based on the junction of two layers ...
Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices
(Japan Society Applied Physics, 2008-12)
The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed ...
Two resistive switching regimes in thin film manganite memory devices on silicon
(American Institute of Physics, 2013-10)
Bipolar resistive switching in low cost n-Si/La2/3Ca1/3MnO3/M (M¼TiþCu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of ...
Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
(Institute of Electrical and Electronics Engineers, 2014-01-13)
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual ...