Actas de congresos
Random Telegraph Signal Noise in Advanced High Performance and Memory Devices
Fecha
2016-01-01Registro en:
2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 6 p., 2016.
WOS:000392469000004
Autor
Imec
Katholieke Univ Leuven
Universidade Estadual Paulista (Unesp)
Liverpool John Moores Univ
Microsyst & Terahertz Res Ctr
Univ Ghent
Institución
Resumen
Random Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS for single defect characterization. Present understanding of the device physics and evolutions in RTS characterization are highlighted. Special attention is given to RTS in memory devices such as DRAMS, ReRAM, planar (2D) and vertical (3D) flash.