Random telegraph signal noise in advanced high performance and memory devices

Actas de congresos

Fecha

2016-11-02

Registro en:

SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum.

http://hdl.handle.net/11449/169280

10.1109/SBMicro.2016.7731315

2-s2.0-85007286667

Autor

Imec

KU Leuven

Universidade Estadual Paulista (Unesp)

Liverpool John Moores University

Microsystem and Terahertz Research Center

Ghent University

Institución

Universidade Estadual Paulista (Brasil)

Resumen

Random Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS for single defect characterization. Present understanding of the device physics and evolutions in RTS characterization are highlighted. Special attention is given to RTS in memory devices such as DRAMS, ReRAM, planar (2D) and vertical (3D) flash.

Materias

interface traps

low frequency noise

oxide traps

random telegraph signal

ReRAMs

time lag plot

UTBB SOI

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