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Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopy
(Nature Publishing Group, 2014-06)
The energetics of metal/molecular semiconductor interfaces plays a fundamental role in organic electronics, determining the performance of very diverse devices. So far, information about the energy level alignment has been ...
Quantum well photoelastic comb for ultra-high frequency cavity optomechanics
(IOP Publishing, 2018-12)
Optomechanical devices operated at their quantum limit open novel perspectives for the ultrasensitive determination of mass and displacement, and also in the broader field of quantum technologies. The access to higher ...
Terahertz radiation from magnetic excitations in diluted magnetic semiconductors
(American Physical Society, 2013-04-26)
We probed, in the time domain, the THz electromagnetic radiation originating from spins in CdMnTe diluted magnetic semiconductor quantum wells containing high-mobility electron gas. Taking advantage of the efficient Raman ...
E.D.R.A., the Argentine facility to simulate radiation damage in space
(Pergamon-Elsevier Science Ltd, 2019-01)
E.D.R.A. (Ensayos de Daño por Radiación y Ambiente/Test of Radiation and Environmental Damage) is a system composed of a beam line and a vacuum chamber installed at Tandar (a 20 MV Van de Graaff tandem accelerator). It has ...
Photosensitization of thin SnO2 nanocrystalline semiconductor film electrodes with electron donor-acceptor metallodiporphyrin dyad
(Elsevier Science, 2005-06)
A electron donor-acceptor porphyrin dyad (PZn-P) was synthesized by linking an electron acceptor porphyrin; 5,15-bis(4-carboxyphenyl)-10,20- bis(4-nitrophenyl) porphyrin (P) and an electron donor porphyrin; Zn(II) ...
Control del Factor de Landé en Hilos Cuánticos de GaAs/(Ga,Al)As mediante la Aplicación de Radiación Láser
(Instituto Tecnológico Metropolitano (ITM), 2010-12-15)
En el presente trabajo se estudia la posibilidad de controlar el comportamiento del factor de Landé electrónico en hilos cuánticos semiconductores mediante el cambio de intensidad y de frecuencia de un láser aplicado sobre ...
Propiedades piezoeléctricas del Pentóxido de Niobio y Pentóxido de Tantalio: un estudio desde primeros principios
(Instituto Tecnológico Metropolitano (ITM), 2017-09-04)
Nb2O5 y Ta2O5 son óxidos semiconductores de brecha ancha, los cuales en los últimos años han despertado gran interés debido a sus múltiples aplicaciones tecnológicas, ya sea en electrónica, telecomunicaciones o fotocatálisis. ...
A Two-Dimensional Manganese Gallium Nitride Surface Structure Showing Ferromagnetism at Room Temperature
(American Chemical Society, 2018-01)
Practical applications of semiconductor spintronic devices necessitate ferromagnetic behavior at or above room temperature. In this paper, we demonstrate a two-dimensional manganese gallium nitride surface structure ...
Estado del arte de la tecnología de celdas solares basadas en semiconductores III-V
(Energías Renovables y Medio Ambiente, 2021)
Comprehensive analysis of the composition determination in epitaxial AlxGa1-xAs films: A multitechnique approach
(Elsevier, 2021-03)
We present the determination of aluminum concentration x in epitaxial films of AlxGa1-xAs grown by Molecular Beam Epitaxy (MBE) on GaAs (100) substrates. A large variety of techniques such as quantification of atomic fluxes ...