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Mostrando ítems 61-70 de 2008
Dielectric relaxation of vanadium-molybdenum tellurite glasses modified by alkaline-earth oxides
(Elsevier Science, 2016-07-15)
Electrical response changes due to the incorporation of alkaline-earth oxides in the vanadium-molybdenum tellurite glassy matrix have been studied. The results are explained by analyzing the electric formalisms representations. ...
Electrical Properties of Porous Carbon Powders Synthesized by Nanocasting of Aniline in Mesoporous Silica
(Jesús García-Serrano, Ana Ma. Herrera-González, Juan Coreño-Alonso and Edgar Cardoso-Legorreta, 2017)
Carbon nanotubes/polyamide 6.6 nanostructured composites crystallization kinetic study
(2013-08-01)
Compared with the traditional composites, the incorporation of carbon nanotubes into polymeric matrices can generate materials with superior properties, especially thermal, electrical and tribological properties. The aim ...
Mechanical and electrical properties of red blood cells using optical tweezers
(Iop Publishing LtdBristolInglaterra, 2011)
Electro-optically sensitive diamond-like carbon thin films deposited by reactive magnetron sputtering for electronic device applications
(ELSEVIER SCIENCE SA, 2011)
The goal of this work is to study and relate electrical and optical properties of diamond-like carbon (DLC) thin films for applications in electronic devices. DLC films were deposited in a reactive RF magnetron sputtering ...
Influence of the indium concentration on microstructural and electrical properties of proton conducting NiO-BaCe0.9-xIn xY0.1O3-δ cermet anodes for IT-SOFC application
(2013-06-25)
Optimization of the major properties of anodes based on proton conductors, such as microstructure, conductivity and chemical stability, is yet to be achieved. In this study we investigated the influence of indium on the ...
Microstructural and transport properties of LaNiO3-delta films grown on Si(111) by chemical solution deposition
(Elsevier B.V., 2003-11-24)
Electrically conductive LaNiO3-delta (LNO) thin films with typical thickness of 200 nm were deposited on Si (111) substrates by a chemical solution deposition method and heat-treated in air at 700 degreesC. Structural, ...
On the electrical properties of distinct Eu3 + emission centers in the heterojunction GaAs/SnO2
(2016-08-01)
GaAs/SnO2:2%Eu heterojunctions are deposited by resistive evaporation and sol-gel-dip-coating techniques respectively, with the top layer thermally annealed at different temperatures. The sample annealed at 200 °C/1 h has ...