We report the synthesis, characterization and electrical properties of Ag0.3Cu0.7InS2, Ag0.3Cu0.7InSe2 and Ag0.3Cu0.7InTe2. These solid solutions were synthesized via microwave-assisted solid-state reactions. Powder X-ray diffraction patterns were indexed in the space group 42σ. The chemical compositions were determined by scanning electron microcopy. The analysis of the vibrational properties was performed by Raman scattering measurements. The Raman peaks were analyzed by fitting the spectra and allowed the identification of the vibrational modes via comparison with experimental and theoretical data from CuInQ2 (Q = S, Se, Te) end-members. Ag0.3Cu0.7InS2 and Ag0.3Cu0.7InTe2 exhibit typical semiconductor p-type behavior with a carrier concentration of ~ +10¹⁶ cm⁻³. The electrical conductivities σ at R.T. were ~10⁻¹ S cm⁻¹ and ~1.0 S cm⁻¹ for Ag0.3Cu0.7InS2 and Ag0.3Cu0.7InTe2, respectively. The optical band gaps, based on the UV-Vis-NIR spectra, were Eg ~1.50 eV.