Metallorganic chemical vapor deposition was used to grown TiO2 and N-doped TiO2 on borosilicate substrates at 400??C. Titanium isopropoxide IV was used as titanium and oxygen precursors and ammonia as nitrogen source. Analyses by atomic force microscopy showed that both films presented rounded well-defined grains. The results showed that nitrogen doping resulted in a decrease in the mean grain size and in the surface roughness.