Morphological characterization of N-doped TiO2 thin films

dc.creatorOLIVEIRA, EDUARDO C. de
dc.creatorSZURKALO, MARGARIDA
dc.creatorCORREA, OLANDIR V.
dc.creatorBENTO, RODRIGO T.
dc.creatorPILLIS, MARINA F.
dc.creatorPAN AMERICAN CONGRESS OF NANOTECHNOLOGY, 1st; FUNDAMENTALS AND APPLICATIONS TO SHAPE THE FUTURE
dc.date2018-09-25T13:39:25Z
dc.date2018-09-25T13:39:25Z
dc.dateNovember 27-30, 2017
dc.date.accessioned2023-09-28T14:08:28Z
dc.date.available2023-09-28T14:08:28Z
dc.identifierhttp://repositorio.ipen.br/handle/123456789/29202
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/8999444
dc.descriptionMetallorganic chemical vapor deposition was used to grown TiO2 and N-doped TiO2 on borosilicate substrates at 400??C. Titanium isopropoxide IV was used as titanium and oxygen precursors and ammonia as nitrogen source. Analyses by atomic force microscopy showed that both films presented rounded well-defined grains. The results showed that nitrogen doping resulted in a decrease in the mean grain size and in the surface roughness.
dc.rightsopenAccess
dc.titleMorphological characterization of N-doped TiO2 thin films
dc.typeTexto completo de evento
dc.coverageI


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