Artigo
Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment
Fecha
2017Registro en:
GALEMBECK, EGON H.S.; RENAUX, CHRISTIAN; FLANDRE, Denis; FINCO, SAULO; GIMENEZ, SALVADOR P.. Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v. 17, n. 1, p. 1-1, 2017.
1530-4388
Autor
GALEMBECK, EGON H.S.
RENAUX, CHRISTIAN
FLANDRE, Denis
FINCO, SAULO
GIMENEZ, SALVADOR P.