Ponencia
Implantation of metalic ions on silicon wafers with a low energy Plasma Focus device
Autor
Ugarte-Cejas, Felix
Silva-Zuñiga, Hector Patricio
Zárate-Aliaga, Ramón A
Institución
Resumen
A Plasma Focus device is a pulsed plasma source, where the plasma is generated between concentric cylindrical electrodes in a gaseous atmosphere at low pressure (for example hydrogen). At top end of the anode, a hot and dense plasma column is formed, with about tens mm of diameter and few centimeter of long, that remains stable for tens to hundreds of ns. After this time, instabilities begin to develop, leading to plasma decompression. Ions and electrons beams accompany this disruption, coming from the gas and the anode material (copper). These ions beams have been used for implantation on silicon wafers. A ion spectrum characterization have been made with Faraday cup, and the wafer have been investigated with technique of x-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy (RS) and measurements of electrical properties.