info:eu-repo/semantics/article
New technique for the implementation of nonlinear models for microwave transistors for broadband data communication
Fecha
2015-07-27Registro en:
@INPROCEEDINGS{7167010, author={G. Rafael-Valdivia and Zhiguo Su}, booktitle={2015 IEEE MTT-S International Microwave Symposium}, title={New technique for the implementation of nonlinear models for microwave transistors for broadband data communication}, year={2015}, volume={}, number={}, pages={1-3}, keywords={data communication;equivalent circuits;microwave transistors;nonlinear model;microwave transistor;broadband data communication;drain current function;equivalent circuit;frequency dispersion;Gallium nitride;HEMTs;Pulse measurements;Wideband;Circuit modeling;FETs;microwave devices;pulsed measurements;scattering parameters;memory effects}, doi={10.1109/MWSYM.2015.7167010}, ISSN={0149-645X}, month={May},}
0149-645X
IEEE MTT-S International Microwave Symposium
10.1109/MWSYM.2015.7167010
Autor
Rafael-Valdivia, Guillermo
Institución
Resumen
A new way to implement nonlinear models for microwave transistors is shown. It allows conventional drain current functions and conventional equivalent circuits to enhance their capabilities in order to predict the frequency dispersion.