dc.creatorRafael-Valdivia, Guillermo
dc.date.accessioned2018-11-21T20:52:56Z
dc.date.accessioned2023-06-01T13:53:48Z
dc.date.available2018-11-21T20:52:56Z
dc.date.available2023-06-01T13:53:48Z
dc.date.created2018-11-21T20:52:56Z
dc.date.issued2015-07-27
dc.identifier@INPROCEEDINGS{7167010, author={G. Rafael-Valdivia and Zhiguo Su}, booktitle={2015 IEEE MTT-S International Microwave Symposium}, title={New technique for the implementation of nonlinear models for microwave transistors for broadband data communication}, year={2015}, volume={}, number={}, pages={1-3}, keywords={data communication;equivalent circuits;microwave transistors;nonlinear model;microwave transistor;broadband data communication;drain current function;equivalent circuit;frequency dispersion;Gallium nitride;HEMTs;Pulse measurements;Wideband;Circuit modeling;FETs;microwave devices;pulsed measurements;scattering parameters;memory effects}, doi={10.1109/MWSYM.2015.7167010}, ISSN={0149-645X}, month={May},}
dc.identifier0149-645X
dc.identifierhttp://repositorio.ulasalle.edu.pe/handle/20.500.12953/38
dc.identifierIEEE MTT-S International Microwave Symposium
dc.identifier10.1109/MWSYM.2015.7167010
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/6517162
dc.description.abstractA new way to implement nonlinear models for microwave transistors is shown. It allows conventional drain current functions and conventional equivalent circuits to enhance their capabilities in order to predict the frequency dispersion.
dc.languageeng
dc.publisherUniversidad La Salle
dc.relationinfo:eu-repo/semantics/article
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.sourceUniversidad La Salle
dc.sourceRepositorio institucional - ULASALLE
dc.subjectResearch Subject Categories::TECHNOLOGY
dc.titleNew technique for the implementation of nonlinear models for microwave transistors for broadband data communication
dc.typeinfo:eu-repo/semantics/article


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