Amorphous lead titanate: A new wide-band gap semiconductor with photoluminescence at room temperature

Artículos de revistas

Fecha

2000-01-01

Registro en:

Advanced Functional Materials, v. 10, n. 6, p. 235-240, 2000.

1616-301X

http://hdl.handle.net/11449/231698

10.1002/1099-0712(200011/12)10:6<235

2-s2.0-0034316387

https://repositorioslatinoamericanos.uchile.cl/handle/2250/5411832

Autor

Universidade Federal de São Carlos (UFSCar)

Universidade Estadual Paulista (UNESP)

Universidade de São Paulo (USP)

Institución

Universidade Estadual Paulista (Brasil)

Resumen

This paper describes a new amorphous wide-band gap semiconductor with photoluminescence (PL) at room temperature. The amorphous PbTiO3 was prepared by a sol-gel-like process in powder and thin film form. The optical property and the PL behaviour showed a direct relation to the amorphous structure. The PL peak energy can be controlled by the change of the exciting surge energy. Copyright © 2000 John Wiley & Sons, Ltd.

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