Amorphous lead titanate: A new wide-band gap semiconductor with photoluminescence at room temperature

dc.contributorUniversidade Federal de São Carlos (UFSCar)
dc.contributorUniversidade Estadual Paulista (UNESP)
dc.contributorUniversidade de São Paulo (USP)
dc.date.accessioned2022-04-29T08:46:57Z
dc.date.accessioned2022-12-20T03:19:10Z
dc.date.available2022-04-29T08:46:57Z
dc.date.available2022-12-20T03:19:10Z
dc.date.created2022-04-29T08:46:57Z
dc.date.issued2000-01-01
dc.identifierAdvanced Functional Materials, v. 10, n. 6, p. 235-240, 2000.
dc.identifier1616-301X
dc.identifierhttp://hdl.handle.net/11449/231698
dc.identifier10.1002/1099-0712(200011/12)10:6<235
dc.identifier2-s2.0-0034316387
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/5411832
dc.description.abstractThis paper describes a new amorphous wide-band gap semiconductor with photoluminescence (PL) at room temperature. The amorphous PbTiO3 was prepared by a sol-gel-like process in powder and thin film form. The optical property and the PL behaviour showed a direct relation to the amorphous structure. The PL peak energy can be controlled by the change of the exciting surge energy. Copyright © 2000 John Wiley & Sons, Ltd.
dc.languageeng
dc.relationAdvanced Functional Materials
dc.sourceScopus
dc.subjectAmorphous materials
dc.subjectLuminescence
dc.subjectMaterials science
dc.subjectSemiconductors
dc.subjectSol-gel process
dc.titleAmorphous lead titanate: A new wide-band gap semiconductor with photoluminescence at room temperature
dc.typeArtículos de revistas


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