Actas de congresos
Analysis and measurement of the non-linear refractive index of SiOx Ny using pedestal waveguides
Fecha
2019-08-01Registro en:
SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.
10.1109/SBMicro.2019.8919392
2-s2.0-85077217233
Autor
Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
IPEN-CNEN/SP
São Paulo State Technological College (FATEC)
Institución
Resumen
In this work, the non-linear refractive index (n2) of silicon oxynitride (SiOx Ny) is determined, obtaining a value for this material of n2 = 2.11×10-19 m2/W. The results demonstrate that this material has interesting properties for the development of non-linear optical devices. The paper presents in detail the waveguide fabrication process using the pedestal technique, which allows using different materials since it does not require etching to define the sidewalls of the waveguides. We show the results of the measurement of the n2 employing the non-linear optical phenomena of Self-Phase Modulation (SPM).