Analysis and measurement of the non-linear refractive index of SiOx Ny using pedestal waveguides

dc.contributorUniversidade de São Paulo (USP)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorIPEN-CNEN/SP
dc.contributorSão Paulo State Technological College (FATEC)
dc.date.accessioned2020-12-12T01:10:09Z
dc.date.accessioned2022-12-19T20:39:52Z
dc.date.available2020-12-12T01:10:09Z
dc.date.available2022-12-19T20:39:52Z
dc.date.created2020-12-12T01:10:09Z
dc.date.issued2019-08-01
dc.identifierSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.
dc.identifierhttp://hdl.handle.net/11449/198340
dc.identifier10.1109/SBMicro.2019.8919392
dc.identifier2-s2.0-85077217233
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/5378974
dc.description.abstractIn this work, the non-linear refractive index (n2) of silicon oxynitride (SiOx Ny) is determined, obtaining a value for this material of n2 = 2.11×10-19 m2/W. The results demonstrate that this material has interesting properties for the development of non-linear optical devices. The paper presents in detail the waveguide fabrication process using the pedestal technique, which allows using different materials since it does not require etching to define the sidewalls of the waveguides. We show the results of the measurement of the n2 employing the non-linear optical phenomena of Self-Phase Modulation (SPM).
dc.languageeng
dc.relationSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
dc.sourceScopus
dc.subjectintegrated photonics
dc.subjectmicroelectronics
dc.subjectnon-linear photonics
dc.subjectnon-linear refractive index
dc.subjectoptical devices
dc.subjectself-phase modulation
dc.subjectsilicon oxynitride
dc.titleAnalysis and measurement of the non-linear refractive index of SiOx Ny using pedestal waveguides
dc.typeActas de congresos


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