info:eu-repo/semantics/article
Characterization of ZnO and ZnO:Al thin films deposited by the sol-gel dip-coating technique
Fecha
2008-12Registro en:
Marotti, R. E.; Bojorge, Claudia Daniela; Broitman, E.; Canepa, Horacio Ricardo; Badán, J. A.; et al.; Characterization of ZnO and ZnO:Al thin films deposited by the sol-gel dip-coating technique; Elsevier Science Sa; Thin Solid Films; 517; 3; 12-2008; 1077-1080
0040-6090
CONICET Digital
CONICET
Autor
Marotti, R. E.
Bojorge, Claudia Daniela
Broitman, E.
Canepa, Horacio Ricardo
Badán, J. A.
Dalchiele, E. A.
Gellman, A. J.
Resumen
Nanocrystalline zinc oxide films have been obtained by the sol-gel process. The films were deposited from precursor solutions by dip-coating on quartz substrates, and subsequently transformed into nanocrystalline pure or aluminium-doped ZnO films after a thermal treatment. The film microstructure and composition characterization was studied by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The optical properties were studied by transmittance spectroscopy. The water adsorption energy was measured by temperature programmed desorption (TPD) in the range 90-700 K. The optical transmittance in the UV region gives bandgap energy values of 3.27 eV for undoped samples, and higher than 3.30 eV for the Al-doped ones. The increase in bandgap energy in Al-doped samples may be explained by band-filling effects. The band edge absorption coefficient increases monotonically for the Al-doped samples but has a shoulder for the undoped ones, which may be assigned to room-temperature excitonic absorption.