dc.creatorMarotti, R. E.
dc.creatorBojorge, Claudia Daniela
dc.creatorBroitman, E.
dc.creatorCanepa, Horacio Ricardo
dc.creatorBadán, J. A.
dc.creatorDalchiele, E. A.
dc.creatorGellman, A. J.
dc.date.accessioned2019-08-22T22:24:38Z
dc.date.accessioned2022-10-15T15:44:48Z
dc.date.available2019-08-22T22:24:38Z
dc.date.available2022-10-15T15:44:48Z
dc.date.created2019-08-22T22:24:38Z
dc.date.issued2008-12
dc.identifierMarotti, R. E.; Bojorge, Claudia Daniela; Broitman, E.; Canepa, Horacio Ricardo; Badán, J. A.; et al.; Characterization of ZnO and ZnO:Al thin films deposited by the sol-gel dip-coating technique; Elsevier Science Sa; Thin Solid Films; 517; 3; 12-2008; 1077-1080
dc.identifier0040-6090
dc.identifierhttp://hdl.handle.net/11336/82013
dc.identifierCONICET Digital
dc.identifierCONICET
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/4404625
dc.description.abstractNanocrystalline zinc oxide films have been obtained by the sol-gel process. The films were deposited from precursor solutions by dip-coating on quartz substrates, and subsequently transformed into nanocrystalline pure or aluminium-doped ZnO films after a thermal treatment. The film microstructure and composition characterization was studied by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The optical properties were studied by transmittance spectroscopy. The water adsorption energy was measured by temperature programmed desorption (TPD) in the range 90-700 K. The optical transmittance in the UV region gives bandgap energy values of 3.27 eV for undoped samples, and higher than 3.30 eV for the Al-doped ones. The increase in bandgap energy in Al-doped samples may be explained by band-filling effects. The band edge absorption coefficient increases monotonically for the Al-doped samples but has a shoulder for the undoped ones, which may be assigned to room-temperature excitonic absorption.
dc.languageeng
dc.publisherElsevier Science Sa
dc.relationinfo:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0040609008006494
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/https://doi.org/10.1016/j.tsf.2008.06.028
dc.rightshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.subjectDOPING
dc.subjectOPTICAL PROPERTIES
dc.subjectSOL-GEL
dc.subjectTEMPERATURE PROGRAMMED DESORPTION
dc.subjectTHIN FILMS
dc.subjectZINC OXIDE
dc.titleCharacterization of ZnO and ZnO:Al thin films deposited by the sol-gel dip-coating technique
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:ar-repo/semantics/artículo
dc.typeinfo:eu-repo/semantics/publishedVersion


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