MOS device chemical response reversal with temperature

Lombardi, Rina; Aragon, Ricardo

info:eu-repo/semantics/article

Fecha

2010-02

Registro en:

Lombardi, Rina; Aragon, Ricardo; MOS device chemical response reversal with temperature; Elsevier Science Sa; Sensors and Actuators B: Chemical; 144; 2; 2-2010; 457-461

0925-4005

http://hdl.handle.net/11336/81936

CONICET Digital

CONICET

https://repositorioslatinoamericanos.uchile.cl/handle/2250/4403340

Autor

Lombardi, Rina

Aragon, Ricardo

Institución

Consejo Nacional de Investigaciones Científicas y Tecnológicas (Argentina)

Resumen

Biased above threshold (VT), pulsed photocurrent (u) measurements on windowed silicon Pd gate MOS capacitors are shifted (ΔV) negatively by H2/N2, whereas Au gates shift positively under NO2/air. Below VT, the shifts are reversed by adjustments of interface state population. Minor temperature increases may coax the device from inversion to depletion, inducing sign reversal of the chemical response.

Materias

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